ã Diodes Incorporated. 1N SCHOTTKY BARRIER SWITCHING DIODE. Features. ·. Low Forward Voltage Drop. ·. Guard Ring Construction for Transient. 1N and 1N Vishay Semiconductors formerly General Semiconductor. Document Number 8-May 1. Schottky Diodes. 1N datasheet, 1N pdf, 1N data sheet, datasheet, data sheet, pdf, BKC International Electronics, 60 V, mW silicon schottky barrier diode.

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The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, b.

(PDF) 1N6263 Datasheet download

The low forward voltage drop and fast switching make it ideal for protection of MO. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling.

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Distributor Name Region Stock Min. The low forward dafasheet drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi. Computers and Peripherals Data Center.

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The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and.

The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,bi. Product is in design stage Target: Support Center Video Center. No commitment taken to design or produce NRND: Who We Are Management. ST Code of Conduct Blog. The low forward voltage drop and fast switching make i t datasheeet for protection of MOS devices, steering, biasing and coupling.

Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. General terms and conditions. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.

Product is in volume production only to support customers ongoing production. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering.

Product is in volume production Evaluation: Communications Equipment, Computers and Peripherals. Limited Engineering samples available Preview: Free Sample Add to cart. Marketing proposal for customer feedback. Product is in volume production. IoT for Smart Things. Media Subscription Media Contacts. Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.

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1N – 60 V, 15 mA axial RF and Ultrafast Switching Signal Schottky Diode – STMicroelectronics

Features For general purpose applications Metal silicon schottky barrier device which is protected by a Datashert junction guard ring. Not Recommended for New Design. Please contact our sales support for information on specific devices.

Getting started with eDesignSuite 5: The low forward voltage drop and fast switching make it ideal for protection o. Product is in design feasibility stage. Tools and Software Development Tools. Product is under characterization. No availability reported, please contact our Sales office.

Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. For general purpose applications 2.