Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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Body Diode Reverse Recovery Time. Case-to-Sink, Flat, Greased Surface. V DS Temperature Coefficient. Unclamped Inductive load test circuit Figure Contents Contents 1 Electrical ratings. Copy your embed code and put on your site: Prev Next General features.
The maximum ratings related to soldering conditions are also marked on the inner box label. Pulsed Drain Current a. Pulsed Diode Forward Current a.
Test circuit for inductive load switching and diode recovery times Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. I SM p – n junction diode. Body Diode Reverse Recovery Charge.
IRF datasheet and specification datasheet. Switching times test circuit for resistive load Figure Gate charge vs gate-source voltage Figure L S die contact.
Soldering Recommendations Peak Temperature. All other trademarks are the property of their respective owners. Zero Gate Voltage Drain Current. Safe operating area for TO Figure 3. IRF dwtasheet and specification datasheet Download datasheet.
Repetitive Avalanche Current a. Operating Junction and Storage Temperature Range. Single Pulse Avalanche Energy b.
IRF STMicroelectronics | Ciiva
These packages have a Lead-free second level interconnect. Repetitive rating; pulse width limited by maximum junction temperature see fig. Continuous Source-Drain Diode Current. This datasheet is subject to change without notice. Unclamped inductive waveform Figure View PDF for Mobile.
Elcodis is a trademark of Elcodis Company Ltd. Electrical characteristics Figure Drain-Source Body Diode Characteristics.
Download datasheet Kb Share this page. Capacitance variations Figure The low thermal resistance. The TOAB package is universally preferred for all.
Pulse width limited by safe operating area 2. Repetitive Avalanche Energy a. Vishay Intertechnology Electronic Components Datasheet. Thermal impedance for TO Figure 4.
STMicroelectronics IRF – PDF Datasheet – MOSFET In Stock |
Static drain-source on resistance Figure Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. N-channel V – 0.
Gate charge test circuit Figure The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.